Growth of GaN from elemental Gallium and Ammonia via Modified Sandwich Growth Technique
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چکیده
منابع مشابه
High pressure growth of bulk GaN from solutions in gallium
In this paper, the growth of GaN single crystals from solutions of atomic nitrogen in liquid gallium under high N2 pressure is described. GaN single crystals obtained by the high nitrogen pressure solution method, without an intentional seeding, show strong growth anisotropy, which results in their platelet shape. The attempts to enhance the growth into (0001) directions by the increase of the ...
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15 صفحه اولGrowth and characterization of SiC and GaN
At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-quality substrates will significantly improve device performance and yield. One of the aims of the...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2004
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-831-e11.38